Strain-induced active tuning of the coherent tunneling in quantum dot molecules

Abstract

We demonstrate experimentally the possibility to manipulate the coupling strength in an asymmetric pair of electronically coupled InGaAs quantum dots by using externally induced strain fields. The coupling strength of holes confined in the dots increases linearly with increasing tensile strain. A model based on $\mathbit{k}\ifmmode\cdot\else\textperiodcentered\fi{}\mathbit{p}$ theory explains the effect in terms of modified weight of the light hole component mediating the coupling in the barrier. Our results are relevant to the creation and control of entangled states in optically active quantum dots.