Abstract
GaN -based pseudomorphic heterostructures with their demonstrated superior thermal performance suggest an alternative to the standard GaAs -based technology to realize high power lasing at THz frequencies. A larger electron effective mass in GaN based system results in the energy levels lying deeper within the quantum well compared to its GaAs counterpart resulting in longer carrier lifetimes assisting transitions required for THz radiation while reducing tunneling current. However, the presence of spontaneous and piezoelectric polarization and dependence of bandgap and band offsets on structural and bias induced strain reduces carrier lifetime.
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