Abstract

Direct measurements of perpendicular strain by channeling presented here show that self-implantations (50 keV at 20 K) at dose levels up to amorphization of silicon induce a uniaxial elongation of the lattice parameter. The maximum strain is proportional to the implanted dose up to the amorphous threshold, and the strain varies with depth as the nuclear energy distribution. The relation of such an elongation to the co-existence of disordered amorphous (clusters) and crystalline phases in the implanted layer is discussed.

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