Abstract
PbTe/SnTe heterojunctions have been epitaxially grown on (001) KCI. The effects of strain at the PbTe/SnTe interface have been investigated with the help of electron microscopy. A square grid of edge misfit dislocations with an irregular period has been observed at the interface. The misfit dislocations are generated only in SnTe (or PbTe) layers thicker than some critical thickness, h c ≊ 10 nm . The dislocation period decreases with an increase in the layer thickness. The experimental results have been compared with the theory of elastic strain in epitaxial overgrowths. The theory predicts considerably smaller strain and critical thickness for the introduction of dislocations. Possible reasons for the discrepancy are discussed.
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