Strain in layered zinc blende and wurtzite semiconductor structures grown along arbitrary crystallographic directions

Abstract

We present a simple approach to the evaluation of strain in zinc blende and in wurtzite layered semiconductor structures. These crystallographic structures are of particular interest because of their importance in optoelectronic device applications. The composite layered materials are currently grown pseudomorphically on substrates, which dictate the strain in the layers. Components of the strain are derived for arbitrary crystallographic growth directions. The strain in the layer determines the piezoelectric field in each layer in the structure. The strain and the strain-induced electric field are important in designing layered heterostructures with specific electronic energy levels for device applications. The methods presented are more generally applicable to other crystallographic structures and composite pseudomorphically grown materials. Illustrative problems and solutions are included.