Abstract
We studied the morphology of GaP/(0 0 1)GaAs and GaAs/(0 0 1)GaP heterostructures grown by metal-organic vapour-phase epitaxy and found wire-like surface undulations elongated in the [1 1 0] direction. We attribute this elongation to anisotropic lateral growth rates in the [1 1 0] and [1 1 ̄ 0] directions, which are due to a different roughness of monolayer surface steps. In III–V materials grown by molecular beam epitaxy, such surface corrugations are usually elongated in [1 1 ̄ 0]. We explain this difference by the two growth methods having inverted ratios of lateral growth rates in [1 1 0] and [1 1 ̄ 0]. Resonant tunnelling diodes fabricated from the GaP/GaAs heterostructures showed very symmetric I– V characteristics. Their peak-to-valley ratio was limited to 2, most probably due to the corrugation of the GaP barriers.
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