Abstract
Strain is a powerful tool to modify the optical properties of semiconducting transition metal dichalcogenides like MoS2, MoSe2, WS2 and WSe2. In this work we provide a thorough description of the technical details to perform uniaxial strain measurements on these two-dimensional semiconductors and we provide a straightforward calibration method to determine the amount of applied strain with high accuracy. We then employ reflectance spectroscopy to analyze the strain tunability of the electronic properties of single-, bi- and tri-layer MoS2, MoSe2, WS2 and WSe2. Finally, we quantify the flake-to-flake variability by analyzing 15 different single-layer MoS2 flakes.
Sign-in/Register to access full text options 
Free) 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call
