Strain Engineering in GeSnSi Materials

Abstract

In this study, Ge1-x-ySnxSiy layers (0.01{less than or equal to}x{less than or equal to} 0.06 and 0{less than or equal to}y{less than or equal to}0.12) using Ge2H6, SnCl4 (SnD4) and Si2H6 have successfully grown at 290-310 {degree sign}C on Ge virtual layer on Si(100) by using RPCVD technique. It has been demonstrated that the quality of epitaxial layers is dependent on the growth parameters, layer thickness and the quality of Ge virtual layer. The incorporation of P and B in GeSn matrix has been studied and the effect of dopant specie and concentration on Sn content has been presented. It was found that a proper balance of P, B or Si and Sn flux during the epitaxy improves the incorporation of Sn in Ge matrix. This is explained by the compensation of tensile strain induced by dopants or Si with the compressive strain caused by Sn to obtain the minimum energy in Ge matrix. P-i-n type doped structures of Ge-Sn-Si were grown and the layer quality was analyzed.