Abstract
Si-based resonant interband tunneling diodes (RITDs) grown on commercially available Si0.8Ge0.2 virtual substrates were studied. Peak-to-valley current ratios (PVCRs) were improved by utilizing strain induced band offsets to 3.5 with a peak current density (Jp) of 161A∕cm2. More specifically, a tensilely strained Si layer on the p-side and a compressively strained Si0.5Ge0.5 layer on the n-side were added to the design to form enhanced potential barriers away from the tunneling junction. The outside barriers deepen the respective hole and electron quantum wells and also block nonresonant tunneling current, which improved the PVCR significantly. However, due to the large surface roughness of the SiGe virtual substrates used in this study, the RITDs grown on Si0.8Ge0.2 substrates exhibit a smaller PVCR overall than RITDs optimized on standard Si substrates. Better performance is expected by using higher quality SiGe substrates with smaller surface roughness.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
