Abstract
The surface optical properties of GaAs on GaP-strained layers have been analyzed in situ by chemical modulation spectroscopy. A clear surface-related optical transition has been identified, and the effect of strain on this transition has been studied, showing a blueshift of 30 meV even for epitaxies as thin as 1 ML of GaAs deposited on top of GaP. This small shift is consistent with a transition between dimer states and dangling-bond states of the Ga-Ga dimers.
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