Abstract
Lifetimes were measured in several InGaAs/(Al)GaAs samples with various levels of strain and strain relief, with thick barriers and with GaAs barriers. Lifetimes of the order of 0.5 ns were measured. We have found that the introduction of indium, to obtain InGaAs wells, causes a dramatic decrease in the carrier lifetime by an order of magnitude, as compared with similar GaAs wells. Once indium is present in the wells then the dominant carrier loss-recombination process in the InGaAs multiple quantum well materials is unaffected by the strain, strain relief or barrier design.
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