Abstract
An InSb metal-insulator-semiconductor device has been used to investigate the influence of external strain on the shift of the I-V characteristics of an InSb diode. Measured flatband voltage change of C-V characteristics and calculated gate voltage increment owing to stresses have been compared. A simple estimate of external strain of the beam deflection was described. The relationships between external strain and short current, dynamic resistance and open circuit voltage have been shown. A brief discussion of effects in InSb I-V characteristics is given.
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