Abstract
The strain effect on the spin relaxation rate of a two-dimensional GaAs quantum dot has been investigated within the effective mass approximation. For this purpose, first we have calculated the energy levels and wave functions of the system in the presence of Bychkov–Rashba and Dresselhaus terms and strain-dependent term by using the diagonalization method. Then, we have computed the spin relaxation rate by Fermi’s Golden rule. The results show that: (i) there is a maximum in spin relaxation rate for a special magnetic field, that is corresponding to the anti-crossing magnetic field (Bac). (ii) The Bac does not depend on the strain. (iii) There is a minimum in spin relaxation rate at the special strain.
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