Abstract
We investigate resistance switching in proton-memristive NdNiO3 film devices via the diffusional migration of a proton dopant by using electric field control. Lattice strain is found to play a significant role in determining proton migration within NdNiO3 thin film. Compressive strain can accelerate the migration, resulting in a switching efficiency of 28.22% which is significantly higher than 0.21% on a tensile-strained device. The results demonstrate the significance of strain engineering and will guide the development of the design of multifunctional perovskite devices for emerging iontronics memory and computing applications.
Full Text 
Sign-in/Register to access full text options
Sign-in/Register to access full text options 
Paper version not known
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call
