Abstract
InGaN/GaN MQWs, InGaN/AlGaN MQWs and InGaN/AlInGaN MQWs are grown on(0001) sapphire substrates by MOCVD. Membrane samples are fabricated bylaser lift-off technology. The photoluminescence spectra of membranes showa blue shift of peak positions in InGaN/GaN MQWs, a red shift of peakpositions in InGaN/AlGaN MQWs and no shift of peak positions inInGaN/AlInGaN MQWs from those of samples with substrates. Differentchanges in Raman scattering spectra and HR-XRD (0002) profile ofInGaN/AlInGaN MQWs, from those of InGaN/GaN MQWs and InGaN/AlGaN MQWs, areobserved. The fact that the strain changes differently among InGaN MQWswith different barriers is confirmed. The AlInGaN barrier could adjust theresidual stress for the least strain-induced electric field in InGaN/AlInGaN quantum wells.
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