Abstract
The strain effect on the K factor, the differential gain and the nonlinear gain coefficient for InGaAs/InGaAsP tensile-strained and compressive-strained multiquantum well (MQW) lasers is experimentally investigated from the intrinsic modulation response. The differential gain increases with an increase in strain for both types of laser. The strain dependence of the nonlinear gain coefficient is not as high as that of the differential gain. Therefore, the K factor for strained MQW lasers mainly results from the differential gain.
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