Strain-driven phase manipulation of α- and κ-Ga2O3 by nanoepitaxial lateral overgrowth on embedded α-In2O3 submicron dots

Abstract

Heteroepitaxy of corundum-structured α-Ga2O3 and intriguing ferroelectric κ-Ga2O3 is proven as an alternative strategy to solve current challenges in heat dissipation and large-scale productivity for Ga2O3-based power electronic devices, whereas the fundamental growth dynamics and phase control of metastable Ga2O3 are still far unexplored. In this Letter, we demonstrate the strategy of strain engineering for the in situ phase manipulation of metastable Ga2O3 by embedding α-In2O3 submicrometer dots. Phase transition is modulated by the surface coverage of α-In2O3 due to the competitive growth of κ-Ga2O3 upon α-In2O3 and the homoepitaxy of α-Ga2O3 on the exposed α-Ga2O3 seed region. Upon discrete α-In2O3 submicrometer dots with a low surface coverage, the growth undergoes a nano-scale epitaxial lateral overgrowth mode, in which the selective homoepitaxy of α-Ga2O3 is dominant, and embedded α-In2O3 serves as nano-masks to prevent the threading dislocation propagation into the lateral overgrown Ga2O3 layer. In comparison, κ-Ga2O3 is energetically favorable on the interconnected α-In2O3 submicrometer dots, which are driven by the in-plane tensile strain as probed by the geometric phase analysis of transmission electron microscopy. Phase manipulation by embedded sub micrometer dots allows us to deliver high-quality Ga2O3 with well-defined phases and to conceive advanced devices with ultra-low loss, high frequency, and memorizing functionality.