Strain distribution in wrinkled hBN films

Abstract

Sapphire-supported hBN films of different thicknesses are grown using metalorganic vapour phase epitaxy technique by following a flow modulation scheme. Though these wafer-scale films are potential candidates for real device applications, they exhibit wrinkling. The wrinkles are a key signature of strain distribution in the films. We utilized Raman imaging to study the residual strain distribution in the wrinkled hBN films. An increase in the overall compressive strain in the films with an increase in the layer thickness is observed and explained. An empirical relation is proposed for estimating the wrinkle mediated strain relaxation from the morphology of the films. Furthermore, we show that the residual strain can be partially released by the delamination of the films.