Abstract
The lattice strain distribution in a Si (001) substrate around NiSi 2 island is measured using convergent beam electron diffraction (CBED) over a submicron area. Lower symmetric CBED patterns are observed near the interface, demonstrating that compressing and tensile strains are distributed around NiSi 2 islands. The magnitude of the lattice strains, estimated by comparing the measurements with calculated CBED patterns, was found to be in the range of about 0.1 to 0.4%. Strain singularities were observed at NiSi 2 island corners and attributed to a sum of certain stress components. This feature of the strain distribution is thought to be related to the shape and dimensions of the NiSi 2 islands.
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