Abstract
Transition-metal dichalcogenide (TMDC) homo- and heterostacks hold tantalizing prospects for being integrated as active components in future van der Waals (vdW) electronics and optoelectronics. How...
Highlights
Transition-metal dichalcogenide (TMDC) homoand heterostacks hold tantalizing prospects for being integrated as active components in future van der Waals electronics and optoelectronics
One is the thermodynamic control of nucleation on the first TMDC epilayer, and the other is the kinetic modulation of the growth front of the second TMDC overlayer.[13−15] most discussion is focused on the way to overcome the exceedingly high activation energy on the basal plane of the first epilayer; little work expounds on what properties of the first epilayer will result in a different transition in the growth mode of succeeding TMDC layers
Letter between epitaxial growth and advanced nanoengineering that has the potential to open a new opportunity in the scalable production of TMDC homo- and heterostacks
Summary
Transition-metal dichalcogenide (TMDC) homoand heterostacks hold tantalizing prospects for being integrated as active components in future van der Waals (vdW) electronics and optoelectronics.
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