Abstract
The strain dependence of the pulse voltage induced in a pickup coil originating from the domain wall motion in an amorphous FeSiBNb thin film was investigated. No significant change in the peak pulse voltage was observed when tensile strain was applied to the thin film, whereas the peak pulse voltage changed steeply when compressive strain was applied. In addition, strain susceptibility could be controlled via appropriate annealing. Evaluation of the strain gauge comprising the amorphous FeSiBNb thin film, a pickup coil, an electrical circuit (which converts the pulse voltage into direct current voltage), and a Helmholtz coil revealed that strain gauge has a notably high gauge factor of approximately 37,500.
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