Abstract
In Si/Si1-xGex/Si(100) heterostructure patterned into stripe shape with <110> direction, strain control of capping Si and Si1-xGex layers is investigated. The Raman scattering analysis of the stripe patterned Si/Si1-xGex/Si(100) heterostructure indicates strain relaxation in Si1-xGex layer and introduction of tensile strain into capping Si layer by submicron stripe patterning. It is found that the effect of heat-treatment (750ºC, 3 h) on the strain relaxation in Si0.6Ge0.4 layer of stripe has a negligibly small. The metal-oxide-semiconductor capacitor and photoluminescence measurements for strain controlled stripe patterned Si/Si1-xGex/Si(100) heterostructure shows the change of energy band structure.
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