Abstract
We realized strain control method for InGaAs/AlAs/AlAsSb material systems without change of layered structure and degradation of crystal quality. The strain control method was simply achieved by the interface termination between AlAs and AlAsSb layers. In order to evaluate the strain control method and optical quality, multiple quantum wells (MQWs) were grown. X-ray diffraction measurements revealed that strain control of 0.3% was achieved without degradation of the crystal quality when the interface termination was changed from As to Sb. In addition, optical absorption measurements of the MQWs revealed that the optical quality did not change if the interface termination was changed.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
