Strain contrast of dilute semiconductor GaN<inf>1-x</inf>As<inf>x</inf> and Si<inf>1-y</inf>C<inf>y</inf> hetero-epitaxial films in annular dark field images

Abstract

The lower average atomic number strained GaN <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">x</sub> As <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">1-x</sub> (x = 0.029 and 0.045) and Si <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">1-y</sub> C <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">y</sub> (y les 0.015) films were found to be brighter than the higher average atomic number GaAs and Si in annular dark field (ADF) images.