Abstract
Strain compensation in ternary Si 1 − x − y Ge x B y films deposited by RTCVC with x = 0.2 and y ≤ 0.2 was demonstrated. The strain estimated by double crystal X-ray diffraction decreases with increasing boron content due to the decrease of lattice constant by incorporation of boron. The boron concentration estimated for the strain compensation effect obtained and the density of holes calculated from Raman measurements are smaller than the total amount of incorporated boron. That indicates that only a part of the total boro content is substitutional boron.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
