Abstract
Strain-compensated InGaAs/AlInGaAs terahertz quantum cascade lasers grown by molecular beam epitaxy are reported. A choice of a moderate amount of strain in the wells (−0.24%) and in the quaternary barriers (+1.07%) makes it possible to coherently grow an active region as thick as 10 μm. Lasers based on a four quantum well design emit at 3.3 THz with a maximum operation temperature of 149 K, which is among the highest temperatures of InGaAs-based THz quantum cascade lasers.
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