Abstract
The strain effect on the magnetic anisotropy (MA) in free-standing Co2MnSi(001) thin film and the voltage control MA in Au-capped MgO/Co2MnSi thin film are investigated within the framework of density functional theory. We find that the MA of free-standing film with MnSi-termination is sensitive upon strain, while the magnetic easy axis changes from in-plane to out-of-plane under the applied in-plane 1% extension strain. The MA of Au-capped Co2MnSi/MgO shows a ∧-shaped electric-field dependence and a large voltage-controlled MA value (VCMA) of 225 fJ (Vm)−1. The VCMA is caused by the change of the spin-flip term, which is related to the energy shift of the Co dz 2 minority-spin band near the Fermi level. Based on this study, it is expected that Co2MnSi can potentially be used in magnetoelectric spintronic devices.
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