Abstract
AbstractX-ray double- and triple-axis diffractometries were employed to characterize the strain status and structural deformation in Si0.7Ge0.3 alloy layers grown on Si (001) substrates. We show that, at low levels of strain relaxation, x-ray peaks of the Si0.7Ge0.3 alloy layers contain two components, a narrow one superimposed on a broad one. Such a peak profile corresponds to a layer structure consisting of mosaic regions laterally separated by more perfect regions. With the increase in the degree of strain relaxation and consequently in the dislocation density, the narrow component of the x-ray peak gradually disappears as a result of expansion of the mosaic regions and shrinkage or even vanishing of the perfect regions in the layer. Moreover, our results indicate that the conventional method of estimating dislocation density from the x-ray rocking curve width fails in our case.
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