Abstract
Electronic nematicity has previously been observed in La2-xSrxCuO4 thin films by the angle-resolved transverse resistivity method with a director whose orientation is always pinned to the crystal axes when the film is grown on an orthorhombic substrate but not when the substrate is tetragonal. Here we report on measurements of thin films grown on (tetragonal) LaSrAlO4 and subsequently placed in an apparatus that allows the application of uniaxial compressive strain. The apparatus applied enough force to produce a 1% orthorhombicity in LaSrAlO4 and yet no change in the electronic nematicity was observed in films under strain compared to when they were unstrained. The lattice effects are weak, and the origin of nematicity is primarily electronic.
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