Abstract
We have investigated self-assembled Si1−xGex islands grown on Si (001). We show that the average composition and both the εxx and εzz average strain components can be derived from Raman scattering spectra. Both nm-sized and μm-sized islands are investigated. The experimental results are compared successfully with finite-element strain simulations. Raman scattering is shown to be a versatile and reliable tool for investigating capped and uncapped islands. It is shown that strain profiles in μm-sized islands can be obtained by means of micro-Raman.
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