Abstract
We report a striking coupling between strain and carrier concentration variations at micrometer scale in single-layer graphene grown on silicon carbide (SiC) (0001). The in-plane compressive strain (up to 0.4%) and carrier concentration are probed using Raman spectroscopy. We show that the large strain inhomogeneities in graphene initiate at the growth stage and develop further by strain relaxation along the mismatched symmetry axes of the graphene and the underlying substrate. The strain relaxation is accompanied by a locally larger electron concentration, suggesting that charge transfer reduces the strain energy in the overall system. Our work establishes the strain and doping variations as coupled, intrinsic properties of epitaxial graphene growth on SiC(0001).
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
