Abstract
Density-functional based calculations are used to investigate low energy corestructures of 90° partial dislocations in diamond and 3C-SiC. In both materialsdislocation glide is analysed in terms of kink formation and migration andthe fundamental steps to kink migration are investigated. We find the Cterminated core structure in SiC to be more mobile than the Si core.However, the Si partial is electrically active and this opens the possibility ofrecombination-enhanced glide under ionizing conditions or an enhanced mobilityin doped material.
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