Stopping power for low-velocity Mg ions in Si, Ge, and GaAs.

Abstract

The stopping power for $^{26}\mathrm{Mg}$ ions in Si, Ge, and GaAs has been studied in the energy region 0--0.8 MeV/nucleon by application of the inverted-Doppler-shift attenuation-analysis method. Compared to the commonly used empirical electronic stopping power by Ziegler, Bierscak, and Littmark, significant deviations and a different velocity dependence were obtained. The electronic stopping power was determined to an accuracy of \ifmmode\pm\else\textpm\fi{}5%. The experimental nuclear stoping power was taken into account in the deduction of the electronic stopping power.