Abstract
The stopping cross sections, ϵ( E), of He + ions in bismuth have been measured by Rutherford backscattering spectrometry (RBS) at incident energies ranging from E = 1.6–3.4 MeV. The energy loss of He + ions and thicknesses of the bismuth films deposited on aluminium substrates were determined from the RBS spectra at each energy for scattering angles of 130° and 165°. The film thicknesses of some of the samples were also measured by weighing and the results compared with those from RBS. Parameters for energy dependence of stopping cross section in the Varelas-Biersack interpolation formula have been obtained for bismuth from a fit to all the available experimental data. Accuracy of our method based on RBS is demonstrated by measurements on copper, for which ϵ( E) is already well studied. It is also shown that reliable ϵ( E) values may be obtained even on samples with non-uniform film thickness.
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