Abstract
The effects of stoichiometry on various features of III–V compounds are investigated. Application of the optimum vapour pressure of group V elements is shown to minimize the deviation from stoichiometric composition. The temperature dependence of the optimum vapour pressure is also obtained from both annealing and liquid phase epitaxial growth experiments. Vapour pressure technology is successfully applied to bulk crystal growth. In view of the defect formation mechanism, the role of the stable interstitial As atoms (I As) in GaAs is emphasized. The mechanism of stoichiometry control is discussed on the basis of the equality of chemical potentials and the change in saturating solubility in the liquidus phase as a function of the vapour pressure.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
