Stoichiometry effects on surface properties of GaAs{100} grown in situ by MBE

Abstract

Abstract In this paper, we report results dealing with the effects of stoichiometry on surface properties of GaAs(001) layers grown by MBE. Three aspects of surface properties were investigated: crystallography, electronic properties and chemical reactivity. Surface crystallography was studied mainly by LEED. The reconstruction of the surface was found to be drastically dependent on the composition of the uppermost atomic layer, i.e. the surface stoichiometry. According to the arsenic surface coverage, many structures from the c(8 × 2) Ga rich to the (1 × 1) arsenic saturated surface have been observed. The influence of stoichiometry on surface electronic properties has been studied by electron loss spectroscopy (ELS) and contact potential difference (CPD) measurements. In the electron loss spectra, two peaks, at about 10.3 and 20.2 eV are very sensitive to the surface composition: they gradually disappear when the arsenic coverage increases, and consequently are associated with surface states on gallium atoms. On the other hand, the CPD measurements have shown that the variation of the work function with the arsenic surface coverage is not monotonic: in particular, an abrupt change of work function of about 300 meV occurs between the (1 × 6) and c(2 × 8) structures which are very similar as far as the arsenic surface coverage (about 0,5 and 0,6 respectively) is concerned. Therefore, it seems that the work function is strongly dependent on the atomic reconstruction occurring at the surface, and not only on its stoichiometry. The connection between stoichiometry and chemical reactivity of the surface is illustrated by the study of H 2 S adsorption: a large difference (factor of 10 3 ) in sticking coefficient has been found between surfaces with different arsenic coverages.