Abstract
The stoichiometry of grown ZnSe crystals was controlled by using the source crystal pre-annealed under an optimum Zn vapor pressure for Se Te solvent, or an optimum Se vapor pressure for Zn solvent. The full width at half maximum (FWHM) value of the X-ray rocking curve of the crystal grown from the Se Te solvent by using a source annealed under an optimum Zn pressure was three times narrower than that of the one grown from an unannealed source. In the crystal grown from a Zn solvent, the Hall mobility of the crystal obtained from the pre-annealed source under the optimum Se pressure was one and a half times as high as that of the crystal using an unannealed source. The original idea of a stoichiometry control of the II–VI compound semiconductors using a pre-annealed source is proposed.
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