Stoichiometry control and point defects in compound semiconductors

Abstract

Vapor pressure control has shown very significant effects on the properties of a wide variety of compound semiconductor materials, and produced nearly perfect crystals with minimum non-stoichiometry defects. Relevant results of the nonstoichiometry control in annealing and crystal growth are shown, and detailed spectroscopic investigations of stoichiometry-dependent deep levels are presented. It is noticed, for thin film preparation, control of surface stoichiometry is essential on the surface reaction processes in view of the crystal growth mechanism and impurity doping characteristics.