Abstract
We investigated the kinetics of thermal formation of anion vacancies and the subsequent stoichiometry changes on (110) cleavage surfaces of III–V semiconductors by scanning tunneling microscopy. We found that the rate of spontaneous formation of monovacancies depends very sensitively on the doping of the underlying semiconductor and the concentration of surface vacancies. It is shown that the position of the Fermi energy at the surface is the major electronic influence on the energy barrier height for the vacancy formation. We found barrier heights in the range of 1.1–1.3 eV for GaAs and InP. The physical factors affecting the vacancy formation and the surface stoichiometry are discussed in detail.
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