Abstract
Cryogenic scanning tunneling microscopy is employed to investigate the stoichiometry and defects of epitaxial FeSe thin films on ${\mathrm{SrTiO}}_{3}$(001) substrates under various postgrowth annealing conditions. Low-temperature annealing with an excess supply of Se leads to the formation of Fe vacancies and superstructures, accompanied by a superconductivity (metal)-to-insulator transition in FeSe films. By contrast, high-temperature annealing could eliminate the Fe vacancies and superstructures, and thus recover the high-temperature superconducting phase of monolayer FeSe films. We also observe multilayer FeSe during low-temperature annealing, which is revealed to link with Fe vacancy formation and adatom migration. Our results document the very special roles of film stoichiometry and help unravel several controversies in the properties of monolayer FeSe films.
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