Abstract
The (100) surface of cubic silicon carbide has been studied by Auger electron spectroscopy as a function of in-situ annealing in ultra-high vacuum. The line-shape fine structures for both the silicon and carbon Auger transitions which were destroyed by ion bombardment were readily recovered by a brief heat treatment at about 600°C. Further heating above about 1000°C monotonically decreased the Si/C ratio with increasing temperature. Comparison of the changes in the silicon and carbon Auger peak heights with the intensity for the Ar peak from imbedded argon shows that this decrease in Si/C ratio was caused by silicon depletion rather than by carbon accumulation on the surface. A systematic study of the changes in the silicon and carbon Auger peak heights as a function of time and temperature showed that the depletion occured with an activation energy of about 120 kcal/mole (5.2 eV/atom). The carbon Auger line shape indicates that as the silicon was desorbed, the carbon bonding eventually changed from carbidic to graphitic.
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