Abstract
BaTiO<sub>3</sub> thin films have been grown on Si(100) substrate by KrF pulsed-laser deposition (PLD). The influence of substrate temperature and background oxygen pressure on the chemical composition and crystal structure of BaTiO<sub>3</sub> films was studied. The films were characterized by X-ray diffraction (XRD), UV/VIS/NIR spectrometer, atomic force microscopy (AFM), and X-ray photoelectron spectroscopy (XPS). In our experiments, the BaTiO<sub>3</sub> films with uniform grains were produced at O<sub>2</sub> pressure range of 10-30 mTorr and a substrate temperature of 600°C-620°C. At lower substrate temperature, the XRD patterns of the films displayed weaker peaks with wider FWHM and the AFM images showed grain boundary defects and numerous holes. The compositional analysis performed by XPS indicated that almost stoichiometric 1:1:3 composition BaTiO<sub>3</sub> films were grown by PLD at optimized deposition parameters. The excessive oxygen resulted in the formation of other molecules for the film development. The additional XRD peaks of the films were observed when O<sub>2</sub> pressure was increased.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
