Stochastic simulation of primary processes in radiation chemistry

Abstract

A review of recent work on the computer simulation method as applied to investigation of primary processes in radiation chemistry is presented. The method was applied to the ion recombination in nonpolar liquids for small spurs of ionization containing 2 – 4 ion pairs and for recombination in larger (25 – 50) structures corresponding to spherical blobs and cyllindrical tracks of ionization. The trapped electron decay by tunnelling to acceptor molecules in low temperature glasses was also simulated. The kinetics of the electron decay was calculated and was compared with the kinetics calculated on a base of the approximate analytical models of the electron tunnelling.