Abstract
A stochastic Monte Carlo simulation is employed to study various aspects of molecular-beam epitaxial (MBE) growth with the emphasis on understanding the effects of kinetic parameters. In particular, we examine the growth profile of a model III-V compound semiconductor of an anion-terminated (001) substrate. The parameter values for the simulation were chosen with GaAs in mind. We study the effects of substrate temperature and of various kinetic rates on the multilayer growth profile. In addition, we investigate the effects of growth interruption and laser-assisted evaporation of the anion species. The emphasis in this paper is on understanding qualitative trends of MBE growth, rather than on detailed quantitative understanding of the growth of a particular material.
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