Stochastic Resonance of Charge Carriers Diffusion in a Semiconductor Layer under a Nonuniform Low Temperature

Abstract

We study the dynamics of charge carriers jumping from one trap to the other of potential trap depth Φ in a one-dimensional semiconductor layer with the help of thermal noise. Applying a nonuniform temperature, colder around the center and hotter on moving away from it, favors the charge carriers to migrate toward the center and populate around the center. However, exposing the system to another additional nonuniform temperature, hotter around the center, forced the charge carriers to redistribute around two points. The trap potential together with the nonuniform temperature forms a system similar to having bistable potential. Diffusion of charge carriers and thermally transition rate, in a high barrier limit, as a function of controlling parameters has been explored. Due to a time-varying signal the system shows stochastic resonance (SR). The noise that made phase transition also favors the system to exhibit SR by applying a time varying signal. Using two-state approximation, SR of charge carriers diffusion, both analytical and numerical simulation, has been investigated. Our finding shows a strong spectral amplification η at a low temperature.