Abstract
This study explores experimentally the stochastic nature of the domain wall depinning in permalloy nanowires using notches of various shapes and depths. The presence of the domain wall in the notch is detected through its anisotropic magnetoresistance (AMR), which is measured with high precision in order to detect even small changes in the domain wall profile. These measurements showed that variations in the depinning field are related with changes, sometimes very small, in the AMR profile, which indicates that small changes in the pinned domain wall profile can affect largely the depinning process. As these small changes are many times unpredictable and uncontrollable, the stochastic nature of the depinning could have negative consequences for practical applications based on permalloy nanowires.
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