Stochastic current response in diffusive memristor for security applications

Abstract

Among various emerging information encryption technologies, diffusive memristors play an important role in such hardware security applications due to their volatile characteristics and intrinsic stochasticity. Here, we propose a true random number generator (TRNG) based on the random distributed current response of Ag/phenylalanine dipeptide microrod (FF MR)/Ag diffusive memristor which passes all National Institute of Standards and Technology tests. The key innovation of this method is that the degree of randomness of the output bits can be controlled by adjusting the reference voltage (Vref) where ideal 50% average uniformity of the generated random bits can be achieved. Furthermore, we used the true random number generated by TRNG as the cryptographic key to constructing a data encryption system and experimentally demonstrated the fully functional implementation of the encryption process. Through scanning electron microscopy and line scan energy dispersion spectrum analysis of the device, the confinement effect of FF MR on the Ag conductive filaments was verified, ensuring the reliable operation of TRNG and the entire encryption system.