Abstract

高効率テラヘルツデバイス開発のための第一原理計算に基づくSTMシミュレーションによる低温成長GaAsのバルク点欠陥の直接同定

Full Text
Paper version not known

Talk to us

Join us for a 30 min session where you can share your feedback and ask us any queries you have

Schedule a call

Similar Papers

Paper Title
Journal
Date
Author
AsGa antisite defects in LT GaAs as studied by magnetic resonance and magneto-optical techniques
W Jost ... M Kunzer
Semiconductor Science and Technology | VOL. 7
W Jost, et. al.W Jost ... M Kunzer
01 Nov 1992
Point defects in III–V materials grown by molecular beam epitaxy at low temperature
P Hautojärvi ...
European Materials Research Society Symposia Proceedings | VOL. -
P Hautojärvi, et. al.P Hautojärvi ...
01 Jan 1992
Point defects in III–V materials grown by molecular beam epitaxy at low temperature
P Hautojärvi ... L Liszkay
Materials Science and Engineering B | VOL. 22
P Hautojärvi, et. al.P Hautojärvi ... L Liszkay
01 Dec 1993
Lattice relaxation and metastability of the EL2 defect in semi-insulating GaAs and low temperature GaAs
G Kowalski ... S P Collins
Journal of APPLIED Physics | VOL. 87
G Kowalski, et. al.G Kowalski ... S P Collins
15 Apr 2000
View more papers

More From: Vacuum and Surface Science

Paper Title
Journal
Date
Author
On Receiving the Award “JVSS Meister”
Atsushi Sekiguchi
Vacuum and Surface Science | VOL. 67
Atsushi SekiguchiAtsushi Sekiguchi
10 Jul 2024
表面/開殻分子相互作用解明に向けた計算理論の開発
Kohei Tada
Vacuum and Surface Science | VOL. 67
Kohei TadaKohei Tada
10 Jul 2024
Highly Active Oxygen Evolution Reaction Catalyst Using Rhombohedral Boron Monosulfide
Linghui Li ... Takahiro Kondo
Vacuum and Surface Science | VOL. 67
Linghui Li, et. al.Linghui Li ... Takahiro Kondo
10 Jul 2024
講演奨励賞スチューデント部門の受賞に寄せて
Risako Kameyama
Vacuum and Surface Science | VOL. 67
Risako KameyamaRisako Kameyama
10 Jul 2024
View more papers