Abstract
The results of investigation of the room temperature growth of thin Bi films on Si (111)-7 × 7 are present. In the initial stage of Bi film growth the rotationally disordered, pseudo-cubic, Bi {012} islands with a uniform height of 13 Å are formed. With increasing bismuth on the surface, islands interconnect, maintaining however their uniform height, and structural phase transition of the {012} film into a hexagonal Bi (001) film takes place.
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