Abstract
We used scanning tunneling microscopy to investigate graphene formation on an SiC -on-insulator (SiC-OI) substrate. Annealing of an SiC-OI substrate with an SiC thickness of 1500 nm produced a graphene layer on the SiC surface. When the thickness of the SiC film was 5 nm, a graphene layer was not formed on the SiC surface. However, after annealing a C-covered SiC-OI substrate with an SiC thickness of 5 nm, a graphene layer formed on the SiO2 surface.
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